Samsung Semiconductor DRAM 8GB Samsung DDR3-1600 CL11 (512Mx8) ECC DR LV (1.35V) (M391B1G73QH0-YK0)

Product image of Samsung M391B1G73QH0-YK0
  • Product image of Samsung M391B1G73QH0-YK0 1

Pildid on illustratiivsed. Nendel kujutatud toode võib erineda pakutavast või sisaldada tootekomplekti mittekuuluvaid osiseid.

VendorSamsung
Product codeM391B1G73QH0-YK0
Price€145.09
Price (excl. VAT)€118.93
Delivery2-3 weeks
Quantity 5+  pcs
TransportFREE IN ESTONIA!
ESTO
Telia
LHV

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Internal memory:
8 GB
Memory layout (modules x size):
1 x 8 GB
Internal memory type:
DDR3
Memory clock speed:
1600 MHz
Component for:
PC/Server
Memory form factor:
240-pin DIMM
ECC:
Yes
Buffered memory type:
Unregistered (unbuffered)
CAS latency:
11
Memory voltage:
1.35 V
Module configuration:
1024M x 72
Row cycle time:
11 ns
Refresh row cycle time:
11 ns
Operating temperature (T-T):
0 - 85 °C
Sustainability certificates:
RoHS
Doesn't contain:
Halogen
Width:
133.3 mm
Depth:
4 mm
Height:
30 mm
Harmonized System (HS) code:
84733020
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